The company introduces bipolar power modules employing ion implantation and divider ring structures

浙江世菱电力电子有限公司近日推出采用离子注入和分压环结构的双极功率模块，解决高性价比应用的具体需求。这种新型模块进一步解决了国产功率在模块在电流/电压上升率低,正反向电压容易击穿等问题。世菱电子为受成本和性能限制的工业驱动、可再生能源、软启动器、UPS系统、焊接和静态开关等不同应用提供优化的解决方案。Zhejiang World Power Electronics Co., Ltd. recently introduced the use of ion implantation and voltage divider structure of bipolar power module, to solve the high cost performance of the specific needs of the application. The utility model further solves the problems that the domestic power is in the module, the current / voltage rise rate is low, the positive and reverse voltage is easy to breakdown, and the like. Lifetime electronics offers optimized solutions for industrial applications such as cost - and performance limited industrial drives, renewable energy sources, soft starters, UPS systems, welding and static switches.
The module is not only smaller in package size (no more than 50mm), but the market price is about 25% lower than that of related import module (depending on module / application), which has obvious cost advantage. The module is the ideal choice for high robustness applications such as standard drives or UPS that do not require pressure exposure. For soft starters or static switches, which offer high robustness as an important standard, lifetime Electronics will provide the best solution for pressure exposure. For example, the application of an input rectifier operating directly under adverse grid voltage conditions will increase as the module size increases, so a highly stable pressure contact technique is required.
Technical characteristics:
A selection of imported German imports. Wacker FZ Silicon as substrate material products, materials with very low lattice defects and high consistency high resistivity distribution
Two. Chip using voltage divider ring plane structure, VDRM and VRRM, good stability, voltage up to 2200V
Three. The chip uses SIPOS (semi insulating and oxygen doped polysilicon) as the terminal passivation film. The products using SIPOS have extremely low temperature leakage, and the product has excellent high temperature stability
Four. The chip adopts AL, V, Ni and AG four layers of metal structure to form high reliable ohmic contacts
Five. The main structure of the chip is formed by ion implantation technology with high stability and consistency.
Six. The main structure of the chip selects the center gate + amplifying ring structure. It has high current rise rate and voltage rise rate
Seven. Chip using 320um thickness, with very low forward voltage drop
Eight. DBC high efficiency heat insulation substrate
Nine. Chain sintering furnace + hydrogen nitrogen protection sintering process
The new generation power module offers a package backplane width of 20mm, 25mm, 34mm. Each package provides five convenient rectifier designs (2 thyristor / thyristor TT, 2 thyristor / diode TD, and 1 diode / diode DD) modules. Mitsubishi electronics provides products of all sizes with major current ratings, and all models offer 1600V blocking voltages. In such modules, the welding technology module is the industrial standard solution for cost optimization, while the module using pressure contact technology is designed to meet the needs of high current applications and high reliability.
The power module with insulated copper backplane has lower transient thermal resistance than the module that uses only the DCB substrate to heat the radiator, thereby enabling greater reliability in case of overload. The optimized shell and cover structure of the power module only needs minimal torque when tightening the main terminal, and the module has first-class welding quality. In addition, this module has the lowest power consumption and thus enables higher system efficiency

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